BISCIG: Build In Self Characterization In G band

This project includes two versions. The first version (called "load-pull") concerns large signal power measurements to characterize power amplifiers in millimeter and sub-millimeter-wave bands. External current measurement devices, such as commercial impedance tuners, cannot do that efficiently. Because of their intrinsic losses in G-band, they cannot cover all the impedances of the complex plane to be presented at the output of the power amplifier. The second version will enable to characterize 4-ports DUT with small signal analysis (called “S-parameters”) and to perform differential measurements. Indeed, such instrument does not exist beyond 110 GHz. The BISCIG project therefore meets an industrial need for characterization of devices for new applications and expanding in G-band (high-speed communication systems, radar detection, imagers).

Our solution consists in addressing the integrated measurement set-up with a well-known signal covering the 35-55 GHz spectrum. This microwave signal is then amplified and frequency quadrupled in order to address the G-band in the same technology as the DUT. Finally, we measure DC output signals as images of the detected powers, to characterize the behaviour of the DUT. The technology, provided by STMicroelectronics, is the SiGe BiCMOS 55 nm which is very powerful in the millimeter-wave band. The Back End of Line is very well suited to realize passive devices (thick metals in the upper layers). The Front End of Line is completely suitable as well for active devices (fT/fmax = 300/400 GHz). The academic partners will work closely, hand in hand, with the manufacturer STMicroelectronics providing the technology. IMEP-LAHC will design the measurement systems while IEMN will handle the characterization of the component blocks as well as the various sub- systems.

Partners

Partner 1: Grenoble INP - IMEP-LAHC

The Grenoble-INP drives ambitious research activities through 21 laboratories. The Institut de Microélectronique, Électromagnétisme et Photonique (IMEP-LAHC) is part of this pole. With a staff of 170 persons, it is one of France's top micro and nanotechnology research centres, particularly for micro- and nanoelectronics, microphotonics, microsystems and millimetre waves. Grenoble-INP-IMEP-LAHC is focusing much of its efforts on CMOS and post-CMOS nanoelectronics, as well as new materials, alternative technologies, and smart devices. It is one of the most known laboratories around the world for the design of mmW circuits based on slow-wave transmission lines. Baluns, power dividers, filters, couplers, matching networks for PA and LNA have already been realized, with very successful results. The Grenoble-based institute belongs to MINATEC center. In the field of BISCIG, Grenoble-INP-IMEP-LAHC experience includes: participation in European projects such as the Network of Excellence NANOSIL (20 partners) devoted to silicon nanoelectronics; active membership in the FP6 NANOCMOS and PULLNANO projects as well as in the Medea+ project FOREMOST; participation in the ANR (blanc international) COMMAS project (2009-2012); ENIAC MIRANDELA project (2010-2013) and CATRENE RF2THZ project (2011-2014). Grenoble-INP-IMEP-LAHC is equipped with a large number of advanced RF-mmW characterization tools, with several Vector Network Analyzers (from DC up to 110 GHz), and up-to-date wafer probe systems handling 300-mm wafers. It also possesses appropriate clean-rooms and benefits from the vicinity of the “Plateforme Technologique Amont” (PTA), which is, in the same MINATEC centre, a technology processing clean-room open to scientific researchers.

Partner 2: Univ. Lille1 – IEMN

The IEMN Technological Center supports the Institute's research teams but is also available to national and international academic and industrial laboratories. More than 27 engineers and technicians are full-time working in the 1600 m2 technological platform. IEMN has also a characterization facility where experimental techniques are available over a wide frequency range, from DC to THz and for a wide temperature range from 4.7K to 600K. Recently a 220-325 GHz probe station has been acquired. IEMN has a long time expertise in technological demonstrations and characterization of III-V semiconductor devices. It plays an important role in France in research and co-operates with a lot of other European laboratories and industries (Thales, Philips, Alcatel…) through various national and European projects. The equipment allow us to realize devices on Si and III-V with nanometer dimensions for MMW and sub-MMW applications. SOA devices have been fabricated here such as AlInAs/GaInAs HEMTs (metamorphic on GaAs or on InP). THz antennas and UTC diodes have been realized and characterized. On GaN, we have developed HEMT technology that has allowed demonstrating more than 10 W/mm at 10 GHz. We have also investigated T-shaped active ballistic devices with nanometer dimensions. Characterization of the process by SEM, AFM is also part of its expertise. IEMN has also a long and large experience in the field of device characterization and microwave measurements. Frequencies up to 325 GHz can be reached on probe. Also, time resolved THz characterization using a femto-second pulsed laser can be performed at room temperature and in a near future at cryogenic temperatures. IEMN has also unique expertise in optical beating in the THz range, and in RF electromagnetic simulation. For total IEMN, there are about 250 permanent researchers and teachers. In addition there are 150 PhDs and post-docs.

Partner 3: STMicroelectronics

"ST” aims to be the leader in multimedia convergence applications and power solutions, offering one of the world’s broadest product portfolios, including application-specific products containing a large proprietary IP content and multi-segment products that range from discrete devices to highperformance microcontrollers, secure smart card chips and MEMS (Micro-Electro-Mechanical Systems) devices. STMicroelectronics pioneered and continues to refine the use of platform-based design methodologies for complex ICs in demanding applications such as mobile multimedia, set-top boxes and computer peripherals. Since its creation, STMicroelectronics has maintained an unwavering commitment to R&D and is one of the industry’s most innovative companies. STMicroelectronics’s process technology portfolio includes advanced CMOS logic (including embedded memory variants), mixed-signal, analog and power processes. In advanced CMOS, ST is partner with the IBM consortium for the development of next-generation process technologies, including 32 nm and 22 nm CMOS process development, design enablement and advanced research adapted to the manufacturing of 300 mm silicon wafers. STMicroelectronics and IBM will also cooperate at STMicroelectronics’s Crolles 300 mm facility in the development of value-added CMOS derivative SoC technologies.
STMicroelectronics has developed a worldwide network of strategic alliances, including product development with key customers, technology development with customers and other semiconductor manufacturers, and equipment- and CAD-development alliances with major suppliers. These industrial partnerships are complemented by a wide range of research programs conducted with leading universities and research institutes around the world, in addition to playing a key role in Europe’s advanced technology research programs such as MEDEA+ and industry initiatives such as ENIAC (European Nanoelectronics Initiative Advisory Council).

Events

Special session in Newcas2015 conference (June 7-10, 2015, Grenoble): On-chip measurements for characterization, testing, and calibration of analog front-ends and mmW devices

The purpose of the special session is to discuss state-of-the-art on-chip measurement methods in the context of characterization of mmW devices and testing and calibration of analog, mixed-signal, and RF integrated circuits. The need for low-overhead, non-intrusive, and reliable on-chip measurement methods is dictated by:

• the heterogeneity and complexity of modern mixed analog-digital systems-on-chip and systems-in-package that offer very limited controllability and observability from the output pins in order to perform testing;
• the increased process variations in advance technology nodes (e.g. 65nm and beyond) that make post-manufacturing calibration of outmost importance in order to correct yield loss;
• safety-critical and mission-critical systems that need to be equipped with on-chip self-calibration mechanisms for detecting early reliability hazards and applying self-corrective actions (e.g. fault tolerance, self-repair, etc.);
• the numerous modern applications of high-frequency devices (e.g. RF, mmW) whose accurate characterization and post-silicon verification requires to rely on on-chip test structures, since extracting signals off-chip for processing seriously degrades the measurement accuracy.

This special session will gather together worldwide experts on the above research fields to share with the conference attendees the most recent and state-of-the-art solutions proposed to date.
Dowload detailed presentation (pdf)
http://newcas2015.sciencesconf.org/

Publications

1. IEMN, 2. IMEP-LAHC, 3. STMicroelectronics

International Conference

1.      [Newcas2015] A. Bossuet1,2,3, T. Quémerais3, E. Lauga-Larroze2, J.-M. Fournier2, C. Gaquiere1, S. Lepilliet1 , D. Gloria3 « 150 GHz load pull measurements on BiCMOS 55 nm SiGe:C HBT using in situ tuner”Papier invite, Newcas2015, 7-10 juin 2015, Grenoble, France
2.      [BCTM2015] A. Bossuet1,2,3, T. Quémerais3, E. Lauga-Larroze2, J.-M. Fournier2, C. Gaquiere1, S. Lepilliet1 , D. Gloria3 « A 135-150 GHz Frequency Quadrupler with 0.5 dBm Peak Output Power in 55 nm SiGe BiCMOS technology”IEEE BiCMOS Circuits and Technology Meeting, BCTM2015, 16-28 Oct. 2015, Boston, USA
3.    [SiRF2017] W. Aouimeur1,2, J. Moron-Guerra2, A. Serhan2, S. Lepilliet1, T. Quemerais3, D. Gloria3, E. Lauga-Larroze2, J.-D. Arnould1, C. Gaquière1“A G Band +2 dBm Balanced Frequency Doubler in 55 nm SiGe BiCMOS”IEEE Silicon Monolithic Integrated Circuits in RF Systems (SIRF), Phoenix, jan 2017
4.    [INMmiIC2017] W. Aouimeur1,2, J. Moron-Guerra2, A. Serhan2, S. Lepilliet1, T. Quemerais3, D. Gloria3, E. Lauga-Larroze2, J.-D. Arnould1, C. Gaquière1“A G Band Frequency Quadrupler in 55 nm BiCMOS for Bist Applications”, IEEE International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMmiIC2017, Austria, April 2017

National Conference

1.    [JNM2015] A. Bossuet1,2,3, T. Quémerais3, E. Lauga-Larroze2, J.-M. Fournier2, C. Gaquiere1, S. Lepilliet1 , D. Gloria3 « Atténuateur Actif pour les Applications en Bande D réalisé en technologie BiCMOS 55 nm », Journées Nationales Microondes, JNM2015, 3-5 juin 2015, Bordeaux, France
2.    [GDR2015] W. Aouimeur, E. Lauga-Larroze, J. Moron Guerra, T. Quemerais, A. Serhan, C. Gaquière et J.-D. Arnould« Conception d’un quadrupleur de fréquence en technologie BiCMOS 55 nm en bande G »GDROndes, Lyon 19-21 Octobre 2015.
3.     [JNRDM2016] W. Aouimeur1,2, J. Moron-Guerra2, T. Quemerais3, E. Lauga-Larroze2, J.-D. Arnould1, C. Gaquière1"Conception d’un doubleur de fréquence +4 dBm en technologie BiCMOS 55 nm en bande W" Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Toulouse, mai 2016
4.    [GDRondes2017] W. Aouimeur1,2, J. Moron-Guerra2, A. Serhan2, S. Lepilliet1, T. Quemerais3, D. Gloria3, E. Lauga-Larroze2, J.-D. Arnould1, C. Gaquière1« Système de mesure intégré millimétrique en bande G : 140-220 GHz »Papier invité, Journée thématique GT4 du GDR Ondes « Circuits et systèmes intégrés RF/millimétriques », mars 2017, Grenoble
5.    [JNM2017] W. Aouimeur1,2, J. Moron-Guerra2, A. Serhan2, S. Lepilliet1, T. Quemerais3, D. Gloria3, E. Lauga-Larroze2, J.-D. Arnould1, C. Gaquière1"Premier Système de Mesure Petit Signaux Deux Ports Complètement Intégré en Bande G", Journées Nationales Microondes (JNM), Saint-Malo (France), mai 2017